Controlling the morphology and wavelength of self-assembled coaxial GaAs/Ga(As)Sb/GaAs single quantum-well nanowires. Issue 2 (19th December 2022)

• Record Type: Journal Article
• Authors: Kang, Yubin; Lin, Fengyuan; Tang, Jilong; Dai, Qian; Hou, Xiaobing; Meng, Bingheng; Wang, Dongyue; Wang, Le; Wei, Zhipeng
• Is Part Of: Physical chemistry chemical physics. Volume 25:Issue 2(2023)
• Page Start: 1248
• Page End: 1256
• Publication Date: 2022-12-19
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/d2cp04630j
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : Four GaAs/Ga(As)Sb/GaAs SQW NWs with different morphologies and photon energies from 1.323 eV to 0.762 eV were achieved. Abstract : Antimonide-based ternary III–V nanowires (NWs) provide a tunable bandgap over a wide range, and the GaAsSb material system has prospective applications in the 1.3–1.55 μm spectral range of optical communications. In this paper, GaAs/Ga(As)Sb/GaAs single quantum well (SQW) NWs were grown on Si(111) substrates by molecular beam epitaxy (MBE). In addition, the morphologies and tunable wavelengths of the GaAs/Ga(As)Sb/GaAs SQWs were adjusted by interrupting the Ga droplets and changing the growth temperatures and V/III ratios. The four morphologies of the GaAs/Ga(As)Sb/GaAs SQW NWs were observed by scanning electron microscopy (SEM). The microscale lattice structure related to the incorporation of Sb in GaAs/Ga(As)Sb/GaAs SQWs was studied by Raman spectroscopy. The crystal quality of the GaAs/Ga(As)Sb/GaAs SQW NWs was researched by X-ray diffraction (XRD) and transmission electron microscopy (TEM). In addition, the optical properties of the GaAs/Ga(As)Sb/GaAs SQWs were investigated by photoluminescence (PL) spectroscopy. The PL spectra showed the peak emission wavelength range of ∼818 nm (GaAs) to ∼1628 nm (GaSb) at 10 K. This study provides an approach to enhance the effective control of the morphology, structure and wavelength of quantum well or core–shell NWs.