Thermally Driven Point Defect Transformation in Antimony Selenosulfide Photovoltaic Materials. Issue 6 (27th December 2022)
- Record Type:
- Journal Article
- Title:
- Thermally Driven Point Defect Transformation in Antimony Selenosulfide Photovoltaic Materials. Issue 6 (27th December 2022)
- Main Title:
- Thermally Driven Point Defect Transformation in Antimony Selenosulfide Photovoltaic Materials
- Authors:
- Che, Bo
Cai, Zhiyuan
Xiao, Peng
Li, Gang
Huang, Yuqian
Tang, Rongfeng
Zhu, Changfei
Yang, Shangfeng
Chen, Tao - Abstract:
- Abstract: Thermal treatment of inorganic thin films is a general and necessary step to facilitate crystallization and, in particular, to regulate the formation of point defects. Understanding the dependence of the defect formation mechanism on the annealing process is a critical challenge in terms of designing material synthesis approaches for obtaining desired optoelectronic properties. Herein, a mechanistic understanding of the evolution of defects in emerging Sb2 (S, Se)3 solar cell films is presented. A top‐efficiency Sb2 (S, Se)3 solar‐cell film is adopted in this study to consolidate this investigation. This study reveals that, under hydrothermal conditions, the as‐deposited Sb2 (S, Se)3 film generates defects with a high formation energy, demonstrating kinetically favorable defect formation characteristics. Annealing at elevated temperatures leads to a two‐step defect transformation process: 1) formation of sulfur and selenium vacancy defects, followed by 2) migration of antimony ions to fill the vacancy defects. This process finally results in the generation of cation–anion antisite defects, which exhibit low formation energy, suggesting a thermodynamically favorable defect formation feature. This study establishes a new strategy for the fundamental investigation of the evolution of deep‐level defects in metal chalcogenide films and provides guidance for designing material synthesis strategies in terms of defect control. Abstract : Energetic ions in the hydrothermalAbstract: Thermal treatment of inorganic thin films is a general and necessary step to facilitate crystallization and, in particular, to regulate the formation of point defects. Understanding the dependence of the defect formation mechanism on the annealing process is a critical challenge in terms of designing material synthesis approaches for obtaining desired optoelectronic properties. Herein, a mechanistic understanding of the evolution of defects in emerging Sb2 (S, Se)3 solar cell films is presented. A top‐efficiency Sb2 (S, Se)3 solar‐cell film is adopted in this study to consolidate this investigation. This study reveals that, under hydrothermal conditions, the as‐deposited Sb2 (S, Se)3 film generates defects with a high formation energy, demonstrating kinetically favorable defect formation characteristics. Annealing at elevated temperatures leads to a two‐step defect transformation process: 1) formation of sulfur and selenium vacancy defects, followed by 2) migration of antimony ions to fill the vacancy defects. This process finally results in the generation of cation–anion antisite defects, which exhibit low formation energy, suggesting a thermodynamically favorable defect formation feature. This study establishes a new strategy for the fundamental investigation of the evolution of deep‐level defects in metal chalcogenide films and provides guidance for designing material synthesis strategies in terms of defect control. Abstract : Energetic ions in the hydrothermal deposition lead to deep‐level defects with high formation energy, while post‐annealing with prolonged time enables defect transformation from high to low formation energy. A general principle regarding kinetically and thermodynamically controlled defect formation is uncovered and a guidance for materials synthesis is provided. … (more)
- Is Part Of:
- Advanced materials. Volume 35:Issue 6(2023)
- Journal:
- Advanced materials
- Issue:
- Volume 35:Issue 6(2023)
- Issue Display:
- Volume 35, Issue 6 (2023)
- Year:
- 2023
- Volume:
- 35
- Issue:
- 6
- Issue Sort Value:
- 2023-0035-0006-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2022-12-27
- Subjects:
- antimony selenosulfide -- point defects -- Sb 2(S, Se) 3 -- solar cells -- thin films
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1521-4095 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adma.202208564 ↗
- Languages:
- English
- ISSNs:
- 0935-9648
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.897800
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 25737.xml