Effect of hydroxy carboxylates as complexing agent on improving chemical mechanical polishing performance of M-plane sapphire and action mechanism analysis. Issue 6 (15th March 2023)

• Record Type: Journal Article
• Authors: Qu, Minghui; Niu, Xinhuan; Hou, Ziyang; Yan, Han; Luo, Fu
• Is Part Of: Ceramics international. Volume 49:Issue 6(2023)
• Page Start: 9622
• Page End: 9631
• Publication Date: 2023-03-15
• Subjects: Chemical mechanical polishing -- Complexing agent -- M-plane sapphire -- Material removal rate; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2022.11.132
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: As sapphire device performance continues to improve, greater challenges are posed to the chemical mechanical polishing (CMP) of sapphire, with its high degree of hardness and brittleness. M-plane sapphire substrates are not widely used because they are more difficult to process, despite having higher luminous efficiency than C-plane substrates. In this study, the effect of three hydroxyl carboxylates, namely potassium tartrate (PT), potassium citrate (Cit) and sodium gluconate (Gluc), as complexing agents on the CMP of M-plane sapphire was investigated to obtain a high material removal rate (MRR) and low root mean square surface roughness (Sq). First, the chemical reactivities of the three complexing agents were predicted with Material Studio (MS) software. The predicted results showed that the complexing ability of the three complexing agents was greatest for Gluc, followed by Cit, with PT having the least complexing ability. Experimental results confirmed that Gluc was the optimal complexing agent for the M-plane sapphire CMP. The mechanism of action during CMP was revealed by X-ray photoelectron spectroscopy (XPS) and infrared spectroscopy (FTIR). The results showed that the Al(OH)4 ‒ ions produced by the sapphire were complexed by Gluc to form the soluble complex Al(OH)4 ‒ /Gluc ‒ . At the same time, a solid phase reaction also occurred between the M-plane sapphire, SiO2, and water during CMP, and Al2 Si2 O7 ∙2H2 O was generated. After polishing with the optimized slurry, the M-plane MRR was improved to 5.358 μm/h, a 50% improvement compared with the reference slurry, and the Sq decreased from 0.345 nm to 0.172 nm. These findings provide important guidance for the development of high-performance sapphire devices.