Deep defects limiting the conversion efficiency of Sb2Se3 thin-film solar cells. Issue 6 (31st January 2023)
- Record Type:
- Journal Article
- Title:
- Deep defects limiting the conversion efficiency of Sb2Se3 thin-film solar cells. Issue 6 (31st January 2023)
- Main Title:
- Deep defects limiting the conversion efficiency of Sb2Se3 thin-film solar cells
- Authors:
- Dong, Shangwei
Li, Guoshuai
Hong, Jin
Qi, Ruijuan
Yang, Shuai
Yang, Pingxiong
Sun, Lin
Yue, Fangyu - Abstract:
- Abstract : Even under Se-rich conditions, the VSe2 -related deep defects still predominate with an activation energy of ∼0.3 eV, largely limiting the efficiency of solar cell structures below ∼7.63% due to the ultrafast capture rate of non-equilibrium carriers. Abstract : Quasi-one-dimensional (Q1D) semiconductor antimony selenide (Sb2 Se3 ) shows great potential in the photovoltaic field, but the photoelectric conversion efficiency (PCE) of Sb2 Se3 -based solar cells has shown no obvious breakthrough during the past several years, of which the intrinsic reasons are pending experimentally. Here, we prepare high-quality Q1D Sb2 Se3 thin films via the vapor transport deposition technique. By investigating the bandedge electronic level structure and carrier relaxation/recombination dynamics, we find that (i) the optimized Se-rich growth conditions can highly improve the crystal quality of the Q1D Sb2 Se3 thin films, the carrier lifetime of which is substantially increased up to ∼8.3 μs; (ii) the Se-rich growth conditions have advantages to annihilate the deep selenium vacancies VSe i ( i = 1 and 3 for non-equivalent Se atomic sites) but is not effective for the deep donor VSe2, which locates at ∼0.3 eV (300 K) below the conduction band and intrinsically limits the PCE value of devices below ∼7.63%. This work suggests that further optimizing the Se-rich conditions to technically eliminate this kind of deep defect is still essential for preparing high-performance Sb2 Se3 filmAbstract : Even under Se-rich conditions, the VSe2 -related deep defects still predominate with an activation energy of ∼0.3 eV, largely limiting the efficiency of solar cell structures below ∼7.63% due to the ultrafast capture rate of non-equilibrium carriers. Abstract : Quasi-one-dimensional (Q1D) semiconductor antimony selenide (Sb2 Se3 ) shows great potential in the photovoltaic field, but the photoelectric conversion efficiency (PCE) of Sb2 Se3 -based solar cells has shown no obvious breakthrough during the past several years, of which the intrinsic reasons are pending experimentally. Here, we prepare high-quality Q1D Sb2 Se3 thin films via the vapor transport deposition technique. By investigating the bandedge electronic level structure and carrier relaxation/recombination dynamics, we find that (i) the optimized Se-rich growth conditions can highly improve the crystal quality of the Q1D Sb2 Se3 thin films, the carrier lifetime of which is substantially increased up to ∼8.3 μs; (ii) the Se-rich growth conditions have advantages to annihilate the deep selenium vacancies VSe i ( i = 1 and 3 for non-equivalent Se atomic sites) but is not effective for the deep donor VSe2, which locates at ∼0.3 eV (300 K) below the conduction band and intrinsically limits the PCE value of devices below ∼7.63%. This work suggests that further optimizing the Se-rich conditions to technically eliminate this kind of deep defect is still essential for preparing high-performance Sb2 Se3 film solar cells. … (more)
- Is Part Of:
- Physical chemistry chemical physics. Volume 25:Issue 6(2023)
- Journal:
- Physical chemistry chemical physics
- Issue:
- Volume 25:Issue 6(2023)
- Issue Display:
- Volume 25, Issue 6 (2023)
- Year:
- 2023
- Volume:
- 25
- Issue:
- 6
- Issue Sort Value:
- 2023-0025-0006-0000
- Page Start:
- 4617
- Page End:
- 4623
- Publication Date:
- 2023-01-31
- Subjects:
- Chemistry, Physical and theoretical -- Periodicals
541.3 - Journal URLs:
- http://pubs.rsc.org/en/journals/journalissues/cp#!issueid=cp016040&type=current&issnprint=1463-9076 ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/d2cp05585f ↗
- Languages:
- English
- ISSNs:
- 1463-9076
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 6475.306000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 25729.xml