Remotely tuned multistate resistive switching in MoS2/NiMnIn thin film heterostructure for highly flexible ReRAM application. Issue 6 (15th March 2023)

• Record Type: Journal Article
• Authors: Kaushlendra, Kumar; Kumar, Pradeep; Arora, Diksha; Ranjan, Bhanu; Kaur, Davinder
• Is Part Of: Ceramics international. Volume 49:Issue 6(2023)
• Page Start: 9543
• Page End: 9550
• Publication Date: 2023-03-15
• Subjects: Resistive switching -- Flexible devices -- Magnetostrictive materials -- Molybdenum disulfide -- Thin film; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2022.11.122
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: In this article, the Cu/MoS2 /NiMnIn memory structure was fabricated over stainless steel substrate for flexible electronics applications. The bipolar resistive switching characteristics were observed in two different fabricated devices (i) without sulfur vacancies (D1 ) and (ii) with sulfur vacancies (D2 ) in MoS2 thin film. Three different resistance states such as the high resistance state (HRS), intermediate resistance state (IRS) and low resistance state (LRS) have been detected for the D2 memory device. It could be ascribed to the two filamentary models based on the movement of sulfur vacancies and the formation of Cu metallic filament with applied bias voltage. Moreover, the Ohmic and modified space charge limited conduction mechanisms clearly explain the current conduction in different resistance states of device D2 . The fabricated MoS2 thin film-based memory structure exhibits stable resistive switching behavior with a high OFF/ON ratio of ∼3.6 × 10 3, good consistency of ∼3600 endurance cycles and excellent data retention capability up to 3000 s. Moreover, the remote tuning of device D2 was thoroughly investigated and an appreciable change in SET voltage was detected with external temperature and magnetic field. Additionally, the external magnetic field altered the switching states and enhanced the multi-bit data storage capability of the memory device. This can be ascribed to the effect of the Lorentz force on ionic movement in the presence of the external magnetic field. The mechanical flexibility of the memory structure was tested for 1000 bending cycles at various bending angles in both the tensile and compressive bending modes. Hence, the present study opens up new ways for the futuristic flexible device for high data storage and neuromorphic computing applications.