Interface engineering of a hole-transport layer/perovskite with low-band-gap 2D-carbon nitrides for solar cell fabrication. Issue 3 (5th January 2023)

• Record Type: Journal Article
• Authors: Ashraf, Muhammad; Hemasiri, Naveen Harindu; Kazim, Samrana; Ullah, Nisar; Khan, Majad; Adewale Ganiyu, Saheed; R. Alhooshani, Khalid; Tahir, Muhammad Nawaz; Ahmad, Shahzada
• Is Part Of: Sustainable energy & fuels. Volume 7:Issue 3(2023)
• Page Start: 763
• Page End: 768
• Publication Date: 2023-01-05
• Subjects: Renewable energy sources -- Periodicals; Fuel cells -- Periodicals; Electric batteries -- Periodicals; Electrochemistry -- Periodicals; 660.297
• DOI: 10.1039/d2se01225a
• Languages: English
• ISSNs: 2398-4902

Abstract

Abstract : Carbon nitride-based 2D materials, such as C3 N3 and C3 N5, and their role as an interlayer in perovskite solar cells to stabilize NiO x hole selectivity are investigated. Abstract : Interfacial engineering can effectively improve the performance of solar cells by suppressing non-radiative recombination. The inherited ionic and hydrophilic nature of most semiconducting materials used for the hole-transport layer in perovskite solar cells (PSCs) makes them susceptible to moisture. This is one of the factors that compromises the long-term durability of PSCs. In this contribution, we report the synthesis and characterization of polymeric carbon nitride-based 2D materials with the composition C3 N x (where x = 3 or 5) and their placement as an interfacial layer between the hole-selective and perovskite layer in inverted PSCs. This interfacial engineering with 2D polymeric materials could suppress the redox reaction between Ni 3+ in NiO x and organic cations present in perovskites to improve the stability. Such an interlayer could suppress the interfacial charge accumulation at the grain boundaries of perovskites and lower the non-radiative recombination, leading to a higher shunt resistance and amplified fill factor.