1D-2D heterostructured silicon carbide fibers@WS2 with high efficiency and broad bandwidth for microwave absorption performance. Issue 6 (15th March 2023)

• Record Type: Journal Article
• Authors: Zhao, Zixiang; Du, Zuojuan; Huang, Xiaozhong; Jiang, Chao
• Is Part Of: Ceramics international. Volume 49:Issue 6(2023)
• Page Start: 9916
• Page End: 9923
• Publication Date: 2023-03-15
• Subjects: 1D@2D heterostructured SiCf@WS2 -- Microwave absorption -- Interfacial polarization -- Density function theory; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2022.11.167
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: In this study, 1D@2D hetero-structured silicon carbide fibers coated by tungsten disulfide (SiCf @WS2 ) was successfully synthesized, and the microwave absorption performance was explored. It was found that the minimum reflection loss value reached −72.76 dB at 12.74 GHz with the thickness of 2.86 mm for 15 wt% loading of SiCf @WS2 /wax. The effective absorbing bandwidth (EAB, <−10 dB) could reach up to 7.7 GHz with the thickness of 2.84 mm. The SiCf provided a wide surface for WS2 nanosheets to grow on, where the WS2 played a leading role for microwave absorption. WS2 film created more interfaces not only between SiCf and WS2 sheets but among the WS2 nanosheets themselves, which resulted in more interfacial polarization and dielectric loss enhancing the microwave absorbing abilities. In addition, the electronic properties of hetero-interface were calculated by density functional theory (DFT). The results showed that with the electronic charges transferring through the heterointerface, the interfacial polarization and dipole polarization were hugely improved. All above indicated that the hybrid of SiCf @WS2 was a promising microwave absorbing material through a facile synthesis process with low cost, which can be excellent candidate for the efficient microwave absorbing applications. Graphical abstract: Image 1