Cite
HARVARD Citation
Wu, C. et al. (2023). High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H2 plasma and neutral oxygen beam irradiation treatment. Nanotechnology. p. . [Online].
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Wu, C. et al. (2023). High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H2 plasma and neutral oxygen beam irradiation treatment. Nanotechnology. p. . [Online].