First characterization results of ARCADIA FD-MAPS after X-ray irradiation. (1st January 2023)

• Record Type: Journal Article
• Authors: Neubüser, C.; Corradino, T.; Dalla Betta, G.-F.; Mattiazzo, S.; Pancheri, L.
• Is Part Of: Journal of instrumentation. Volume 18:Number 1(2023)
• Publication Date: 2023-01-01
• Subjects: Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc.) -- Particle tracking detectors (Solid-state detectors) -- Radiation-hard detectors -- Solid state detectors; Scientific apparatus and instruments -- Periodicals; 502.84
• DOI: 10.1088/1748-0221/18/01/C01066
• Languages: English
• ISSNs: 1748-0221

Abstract

Abstract: The ARCADIA collaboration is developing fully-depleted (FD) Monolithic Active Pixel Sensors (MAPS) in a 110 nm CMOS process in collaboration with LFoundry. The sensor design incorporates an n+ collection node within a n-type epi-layer on top of a high-resistivity n-type substrate and p+ backside. Thus, the pn-junction sits on the backside and through an applied backside bias, the full substrate gets depleted. The targeted applications of this technology range from future high energy physics experiments to space applications, and medical and industrial scanners. Together, these applications set the minimum requirements on the detector: data collection at hit rates of (10–100) MHz/cm 2, full signal processing within (1–10) μs, maximum power consumption (5–20) mW/cm 2 and radiation tolerances of up to 3.4 Mrad or 6.2 × 10 12 1 MeV neutron equivalent fluence. In order to proof the performance of the technology, a demonstrator chip of 512 × 512 pixels with 25 μm pitch was designed and fabricated in a first engineering run in 2021, together with additional test structures of pixel and strip arrays with different pitches and sensor geometries. The production run has produced functional passive and active pixel matrices. Earlier studies have shown that positive oxide charges and traps at the Si-SiO2 interface, introduced by ionising radiation, affect the depletion region around the collection electrode, increasing the pixel capacitance. By varying the gap size between collection node and pwells, the geometry can be optimised to keep the capacitance low also after irradiation. To study the performance after irradiation, of the optimised diode designs, the passive pixel matrices were irradiated with doses up to 10 Mrad (SiO2 ) using a X-ray tube with a Tungsten anode. The measurements are complemented by TCAD simulations. The maximum capacitance increase after irradiation was found to reach 6 and 12 fF/pixel for pixel pitches of 25 and 50 μm, respectively. The relative capacitance increase after irradiation has hereby been found to reach up to 250% after a dose of 10 Mrad.