One-pot liquid-phase synthesis of MoS2-WS2 van der waals heterostructures for broadband photodetection. (19th March 2023)

• Record Type: Journal Article
• Authors: Bose, Shaona; Mukherjee, Subhrajit; Jana, Subhajit; Srivastava, Sanjeev Kumar; Ray, Samit Kumar
• Is Part Of: Nanotechnology. Volume 34:Number 12(2023)
• Publication Date: 2023-03-19
• Subjects: MoS2-WS2 -- optoelectronics -- van der waals heterostructure -- 2D materials -- chemical exfoliation -- photodetector; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/acab6e
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Two dimensional (2D) van der Waals heterostructures (vdWHs) have unique potential in facilitating the stacking of layers of different 2D materials for optoelectronic devices with superior characteristics. However, the fabrication of large area all-2D heterostructures is still challenging towards realizing practical devices at a reduced cost. In the present work, we have demonstrated a rapid yet simple, impurity-free and efficient sonication-assisted chemical exfoliation approach to synthesize hybrid vdWHs based on 2D molybdenum disulphide (MoS2 ) and tungsten disulphide (WS2 ), with high yield. Microscopic and spectroscopic studies have confirmed the successful exfoliation of layered 2D materials and formation of their hybrid heterostructures. The co-existence of 2D MoS2 and WS2 in the vdWH hybrids is established by optical absorption and Raman shift measurements along with their chemical stiochiometry determined by x-ray photoelectron spectroscopy. The spectral response of the vdWH/Si (2D/3D) heterojunction photodetector fabricated using the as-synthesized material is found to exhibit broadband photoresponse compared to that of the individual 2D MoS2 and WS2 devices. The peak responsivity and detectivity are found to be as high as ∼2.15 A W −1 and 2.05 × 10 11 Jones, respectively for an applied bias of –5 V. The ease of fabrication with appreciable performance of the chemically synthesized vdWH-based devices have revealed their potential use for large area optoelectronic applications on Si-compatible CMOS platforms.