One-dimensional weak antilocalization effect in 1T′-MoTe2 nanowires grown by chemical vapor deposition. (23rd April 2021)

• Record Type: Journal Article
• Authors: Chen, Jiancui; Zhou, Zhang; Liu, Hongtao; Bian, Ce; Zou, Yuting; Wang, Zhenyu; Zhao, Zhen; Wu, Kang; Yang, Haitao; Shen, Chengmin; Cheng, Zhi Gang; Bao, Lihong; Gao, Hong-Jun
• Is Part Of: Journal of physics. Volume 33:Number 18(2021)
• Publication Date: 2021-04-23
• Subjects: chemical vapor deposition -- 1T′-MoTe2 nanowire -- spin–orbit coupling -- one-dimensional weak antilocalization effect; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/abef99
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: We present a chemical vapor deposition method for the synthesizing of single-crystal 1T′-MoTe2 nanowires and the observation of one-dimensional weak antilocalization effect in 1T′-MoTe2 nanowires for the first time. The diameters of the 1T′-MoTe2 nanowires can be controlled by changing the flux of H2 /Ar carrier gas. Spherical-aberration-corrected transmission electron microscopy, selected area electron diffraction and energy dispersive x-ray spectroscopy (EDS) reveal the 1T′ phase and the atomic ratio of Te/Mo closing to 2:1. The resistivity of 1T′-MoTe2 nanowires shows metallic behavior and agrees well with the Fermi liquid theory (<20 K). The coherence length extracted from 1D Hikami–Larkin–Nagaoka model with the presence of strong spin–orbit coupling is proportional to T −0.36, indicating a Nyquist electron–electron interaction dephasing mechanism at one dimension. These results provide a feasible way to prepare one-dimensional topological materials and is promising for fundamental study of the transport properties.