Computational study on the performance of zinc selenide as window layer for efficient GaAs solar cell. (2022)

• Record Type: Journal Article
• Authors: Devendra, KC; Shah, Deb Kumar; Shrivastava, Anik
• Is Part Of: Materials today. Volume 49:Part 7(2022)
• Page Start: 2580
• Page End: 2583
• Publication Date: 2022
• Subjects: GaAs solar cell -- ZnSe window layer -- Carrier concentration -- Efficiency -- Simulation; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2021.06.077
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: This paper reports the optimization of zinc selenide as a window layer for GaAs solar cells in terms of thickness, carrier concentration, and bandgap of the material. Zinc selenide has been chosen for the window layer for appropriate front surface combination with absorber layer for the best performance in GaAs solar cell. The characteristics like current-power curve and efficiency have been analyzed by the PC1D modeling tool by varying different parameters like thickness, carrier concentration, and bandgap of window layer. The short-circuit current of 3.2 A, open-circuit voltage of 0.871 V, and the highest power conversion efficiency of 24.55% of solar cell has been observed at the thickness of 50 nm of the window layer. The electron and hole densities have been observed 1.1 × 10 16 cm −3 and 1 × 10 15 cm −3 respectively at distance from front in the range from 0 μm to 5 μm. The highest power conversion efficiency of 24.26% has been achieved at carrier concentration 1 × 10 16 cm −3, which confirms that the proposed GaAs solar cell could be highly efficient to fabricate commercially at low a cost.