Double‐Layer Quantum Dots as Interfacial Layer to Enhance the Performance of CsPbI3 Solar Cells. Issue 23 (14th July 2022)

• Record Type: Journal Article
• Authors: Zhang, Yi; Li, Zhizai; Chen, HuanYu; Xu, Youkui; Lei, Yutian; Peng, Guoqiang; Zhou, Xufeng; Wang, Qian; Jin, Zhiwen
• Is Part Of: Advanced materials interfaces. Volume 9:Issue 23(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-07-14
• Subjects: defect passivation -- energy level alignment -- insertion layer -- interface engineering; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.202200813
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: CsPbI3 has drawn constant interest in the field of perovskite solar cells (PSCs), due to its remarkable photovoltaic performance and thermal stability. Nonetheless, further development of CsPbI3 PSCs requires solving larger energy loss problem, which is primarily caused by charge recombination and energy band mismatch at the interface. Here, a double‐layer interface engineering concept is introduced that uses CsPbBr3 and CsPbCl3 colloidal quantum dots (QDs) to reduce energy loss. Characterization results suggest that the QDs interfacial layer not only improves the quality of CsPbI3 film through passivating the defects on the film surface and grain boundaries (GBs), but also optimizes energy level structure and establishes additional charge transport paths to facilitate hole transportation. As a result, the power conversion efficiency (PCE) of the device with double‐layer QDs covering is boosted to 18.89% from 17.26%. Its moisture stability is enhanced as well. This work of designing double‐layer QDs provides a new idea for interface engineering, and further manifests the great potential of QDs as interfacial layer. Abstract : This work mainly introduces a double‐layer interface engineering concept that uses CsPbBr3 and CsPbCl3 colloidal quantum dots (QDs) as interfacial layers to optimize energy level structure and improve the quality of CsPbI3 film and reduce energy loss. As a result, the power conversion efficiency of device with double‐layer QDs covering is boosted to 18.89% from 17.26%. Its moisture stability is enhanced as well.