Cite
HARVARD Citation
Hieu, L. et al. (2023). Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications. Semiconductor science and technology. p. . [Online].
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Hieu, L. et al. (2023). Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications. Semiconductor science and technology. p. . [Online].