Cite
HARVARD Citation
Ding, X. et al. (n.d.). Effect of gate insulator thickness on device performance of InGaZnO thin-film transistors. Materials science in semiconductor processing. pp. 326-330. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Ding, X. et al. (n.d.). Effect of gate insulator thickness on device performance of InGaZnO thin-film transistors. Materials science in semiconductor processing. pp. 326-330. [Online].