(Invited) Band Line-up of High-k Oxides on GaN. (24th April 2020)

• Record Type: Journal Article
• Authors: Mitrovic, Ivona Z.; Das, Partha; Jones, Leanne; Gibbon, James; Dhanak, Vinod R.; Mahapatra, Rajat; Partida Manzanera, Teresa; Roberts, Joseph W.; Potter, Richard J; Chalker, Paul R.; Cho, Sung-Jin; Thayne, Iain G
• Is Part Of: ECS transactions. Volume 97:Number 1(2020)
• Page Start: 67
• Page End: 81
• Publication Date: 2020-04-24
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09701.0067ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We present comprehensive experimental work on Tix Al1-x Oy (with x = 9%, 16%, 25%, 36%, 100%) and Gax Al1-x Oy (x = 5%, 20%, 80% and 95%) fabricated using atomic layer deposition with the aim of achieving favorable band alignment with GaN for device applications. The permittivity, k, has been found to be enhanced from ~10 for 9% Ti to 76 for TiO2, but brings unfavorable band line-up and a small conduction band offset (< 0.1 eV) with GaN for all Ti% studied. On the other hand, Gax Al1-x Oy (x = 5%, 20%) films show substantial increase of the band gap from 4.5 eV for Ga2 O3 to 5.5 eV for x = 5% Ga and 6.0 eV for x = 20% Ga in mixed oxides and a strong suppression of leakage current in associated metal insulator semiconductor (MIS) capacitors.