(Invited) A 1-mG MEMS Sensor. (25th April 2016)

• Record Type: Journal Article
• Authors: Yamane, Daisuke; Konishi, Toshifumi; Toshiyoshi, Hiroshi; Masu, Kazuya; Machida, Katsuyuki
• Is Part Of: ECS transactions. Volume 72:Number 3(2016)
• Page Start: 7
• Page End: 14
• Publication Date: 2016-04-25
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07203.0007ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : This paper presents a 1-mG MEMS (microelectromechanical systems) capacitive inertial sensor developed by multi-layer metal technology. The sensor is designed to detect acceleration below 1 mG. A proof-of-concept device is fabricated by using a post-CMOS gold electroplating process. Measurement results suggest that the actual Brownian noise ( BN ) is estimated to be lower than the target BN of 1 μG/Hz 1/2 . Acceleration responses are also experimentally evaluated, which shows the potential of sensing acceleration below 1 mG. Those results reveal that the proposed sensor design could be a promising way to improve the sensitivity and the sensing range of integrated CMOS-MEMS accelerometers