(Invited) Al+ Ion Implanted 4H-SiC: Electrical Activation versus Annealing Time. (3rd July 2019)

• Record Type: Journal Article
• Authors: Nipoti, Roberta; Parisini, Antonella
• Is Part Of: ECS transactions. Volume 92:Number 7(2019)
• Page Start: 91
• Page End: 98
• Publication Date: 2019-07-03
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09207.0091ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Previous and recent results on the electrical activation of ion implanted Al + in 4H-SiC are analyzed. Samples with homogeneous ion implanted dopant concentrations in the decades 10 18 - 10 20 cm -3, implantation temperatures in the range 300 – 400 °C, post implantation annealing temperatures in the range 1500 -1950 °C, and post implantation annealing times in the range 5 min – 75.5 h are taken into account. The selected results fulfills the requirement of minimum two annealing times per annealing temperature and per ion implantation conditions. A new insight on the dynamics of the post implantation annealing in Al implanted 4H-SiC takes origin from this data analysis