Phase transformation and growth mechanism of RF sputtered ferroelectric lead scandium tantalate (PbSc0.5Ta0.5O3) films. Issue 4 (15th December 2022)

• Record Type: Journal Article
• Authors: Gupta, Sanju
• Is Part Of: Journal of the American Ceramic Society. Volume 106:Issue 4(2023)
• Page Start: 2209
• Page End: 2224
• Publication Date: 2022-12-15
• Subjects: growth mechanism -- lead scandium tantalate -- phase transformation kinetics -- reactive RF sputtering -- relaxor ferroelectrics; Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.18874
• Languages: English
• ISSNs: 0002-7820

Abstract

Abstract: Lead scandium tantalate (PbSc0.5 Ta0.5 O3, PST), an order/disorder ferroelectric, is a potential candidate for electrocaloric cooling and pyroelectric infrared (IR) detector. In this work, we report the phase transformation kinetics from two series of samples containing pure amorphous and mixture of amorphous and pyrochlore to desired perovskite phase using postdeposition rapid thermal processing (RTP) as well as growth mechanism of RF sputtered PST thin films using excess lead target on platinized silicon (Pt/Ti/SiO2 /Si) substrates. We find that small changes in the temperature ramp have a large effect on the degree of perovskite conversion (ferroelectric phase), orientation (crystallographic texture), and long‐range order parameter (< S111 >). Through isothermal annealing, we obtained optimal perovskite phase at ≥700°C temperature. The phase transformation is characterized by spontaneous formation of center‐type in‐plane radial rosette‐like structures revealed by scanning electron microscopy. The PST perovskite crystallites were found to coexist with pyrochlore in RTP annealed films. The volume fractions for perovskite and pyrochlore phase were obtained from the analysis of "rosettes" and respective X‐ray diffraction intensities which helped to determine various parameters associated with phase kinetics (n, k, and activation energy, Ea ) and accompanying growth. The effective activation energies of perovskite transition and growth were found to be 332 ± 11 kJ/mol (345 ± 11 kJ/mol) and 114 ± 10 kJ/mol (122 ± 10 kJ/mol), respectively, for pure amorphous only (and mixed amorphous and pyrochlore) phase following nucleation‐growth controlled Avrami's equation. A linear growth rate (n∼1) for the perovskite phase indicates predominant interface‐controlled process and diffusion‐limited phenomena thus inhibiting rosette size owing to reactant depletion and soft impingement at the grain boundary. However, the growth behavior is isotropic in two‐dimension parallel to the plane of the substrates for both sample series. Lead loss was severe for in‐situ growth and RTP combined with conventional furnace annealing than those of RTP only films, which were closer to stoichiometric albeit with excess lead and marginal oxygen vacancies (Vo ).