Towards InGaAs MSDRAM Capacitor-Less Cells. (10th April 2018)

• Record Type: Journal Article
• Authors: Navarro, Carlos; Navarro, Santiago; Marquez, Carlos; Sampedro, Carlos; Donetti, Luca; Karg, Siegfried; Riel, Heike; Gamiz, Francisco
• Is Part Of: ECS transactions. Volume 85:Number 8(2018)
• Page Start: 195
• Page End: 200
• Publication Date: 2018-04-10
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08508.0195ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The viability of III-V capacitor-less DRAM cells is assessed by Synopsys TCAD simulations. In particular, the MSDRAM cell is built and analyzed using InGaAs materials. Preliminary results prove distinct current levels according to the previous programming operation successfully validating the memory capabilities and motivating further investigation