Cite
HARVARD Citation
Charles, M. et al. (2018). (Invited) Epitaxy of GaN on Si (111) for Power Electronics, RF and LEDs. ECS transactions. pp. 233-247. [Online].
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Charles, M. et al. (2018). (Invited) Epitaxy of GaN on Si (111) for Power Electronics, RF and LEDs. ECS transactions. pp. 233-247. [Online].