Energy Band Diagram of FTO/porous Silicon Heterostructure. Issue 1 (March 2021)

• Record Type: Journal Article
• Authors: Hadi, Hasan A.; Ismail, Raid A.
• Is Part Of: Journal of physics. Volume 1795:Issue 1(2021)
• Publication Date: 2021-03
• Subjects: porous silicon -- photo-electrochemical etching PECE -- thermal evaporation -- absorption coefficient; Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1795/1/012016
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: We have proposed for the first time the energy band diagram of fluorine doped tin oxide FTO/porous silicon PSi/n-Si heterostructure prepared by spray pyrolysis technique and laser assist-electrochemical etching ECE. The band line-up of the heterojunction was constructed from the electrical and optical properties of FTO and porous silicon. The electrical current-voltage and capacitance-voltage measurements showed the barrier height, ideality factor and built in voltage of the heterojunction were 1.4, 0.69 V and 0.70 V, respectively. The optical energy gap and the average of the optical transmittance of FTO film were 3.6 eV and 78% respectively. The morphology of porous silicon PSi and FTO film investigated by scanning electron microscope SEM. The elemental composition of FTO film was determined using energy dispersive x-ray.