(Invited) III-V / Si Integration for Photonics. (4th May 2016)

• Record Type: Journal Article
• Authors: Reithmaier, Johann Peter; Benyoucef, Mohamed
• Is Part Of: ECS transactions. Volume 72:Number 4(2016)
• Page Start: 171
• Page End: 179
• Publication Date: 2016-05-04
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07204.0171ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : A brief overview is given on different approaches how to integrate III-V materials on a silicon platform for photonics with a main focuson epitaxial techniques. Beside diverse bonding and different direct epitaxial growth techniques of III-V on Si, a new potential approach based on a III-V/Si nanocomposite will be discussed, which may allow to overcome most of the basic problems in heterogeneous integration techniques, e.g., cross-contamination between III-V and Si and cost issues related to parallel efforts in III-V and Si processing. Initial results towards this new approach will be presented, such as on optically active GaAs/InAs core-shell quantum dots directly grown on Si and on monolithic integration of InAs nanoclusters fully embedded into a defect free and planar Si matrix. Due to the minimization of the consumption of the involved III-V materials and the complete Si coverage, standard Si processes on a full wafer scale are feasible.