Dependence of dose rate on the sensitivity of the resist under ultra-high flux extreme ultraviolet (EUV) pulse irradiation. (12th May 2021)

• Record Type: Journal Article
• Authors: Okamoto, Kazumasa; Kawai, Shunpei; Ikari, Yuta; Hori, Shigeo; Konda, Akihiro; Ueno, Koki; Arai, Yohei; Ishino, Masahiko; Dinh, Thanh-Hung; Nishikino, Masaharu; Kon, Akira; Owada, Shigeki; Inubushi, Yuichi; Kinoshita, Hiroo; Kozawa, Takahiro
• Is Part Of: Applied physics express. Volume 14:Number 6(2021)
• Publication Date: 2021-05-12
• Subjects: X-ray free electron laser -- sensitivity -- multiple spur effect -- extreme ultraviolet resist -- extreme ultraviolet lithography; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/abfca3
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Efforts are being focused on increasing the power of extreme ultraviolet (EUV) light sources used in semiconductor manufacturing to increase the throughput. As a result, the investigation of the effect of high power sources on resist materials is a critical issue. A chemically amplified resist (CAR) and a non-CAR were irradiated with 13.5 nm EUV high-flux pulses from a soft X-ray free-electron laser (FEL). In the non-CAR, the positive-tone resist (ZEP520A) exhibited lower sensitivity at high irradiation densities, while the negative-tone resist exhibited a higher sensitivity. In addition, the dose rate did not considerably affect the sensitivity of the CAR.