Cite
HARVARD Citation
Pourtois, G. et al. (2017). (Invited) Probing the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic Simulations. ECS transactions. pp. 303-311. [Online].
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Pourtois, G. et al. (2017). (Invited) Probing the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic Simulations. ECS transactions. pp. 303-311. [Online].