DLTS spectra of radiation-induced defects in silicon detectors with heavily damaged Bragg peak region. (December 2020)

• Record Type: Journal Article
• Authors: Mitina, D; Eremin, V; Verbitskaya, E; Eremin, I
• Is Part Of: Journal of physics. Volume 1697(2020)
• Publication Date: 2020-12
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1697/1/012071
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: The investigation is focused on the defects in silicon p + -n-n + detectors irradiated with the 53.4 MeV 40 Ar ions, which generate a nonuniform defect distribution including a heavily damaged region inside the Bragg peak. The dependences of the bulk generation current and of the capacitance on bias voltage and the spectra of radiation-induced defects demonstrate new features: a step in the current rise, a region with a practically constant capacitance, and abnormal dependence of the peak amplitudes of vacancy-related defects on fluence. The changes of the DLTS spectra are assigned to the influence of silicon properties inside the Bragg peak region acting as a highly compensated insulating layer.