Determination of Phonon Deformation Potentials in Carbon-Doped Silicon. (20th July 2018)

• Record Type: Journal Article
• Authors: Yoshioka, Kazutoshi; Yokogawa, Ryo; Murakami, Tatsumi; Komago, Shota; Sawamoto, Naomi; Ogura, Atsushi
• Is Part Of: ECS transactions. Volume 86:Number 7(2018)
• Page Start: 419
• Page End: 425
• Publication Date: 2018-07-20
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08607.0419ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Carbon-doped silicon (Si:C) is used as a stressor to the channel of n-type metal oxide semiconductor field-effect-transistor (MOSFET). In this study, we determined phonon deformation potentials ( p and q ) of Si:C to realize evaluation of anisotropic biaxial strain by using water-immersion Raman spectroscopy. Raman peak shift in longitudinal and transverse optical (LO and TO) phonon modes were measured by water-immersion Raman spectroscopy. Furthermore, in-plane and out-of-plane strain were measured by X-ray diffraction (XRD). Based on the Raman shift and the in-plane strain, p and q in each sample were derived. As a result, it took a different value from pure-Si, and the PDPs tended to increase as the C concentration increased.