(Invited) First Principles and Themodynamical Studies on Matel Organic Vaper Phase Epitaxy of GaN. (16th August 2017)

• Record Type: Journal Article
• Authors: Shiraishi, Kenji; Sekiguchi, Kazuki; Shirakawa, Hiroki; Chokawa, Kenta; Araidai, Masaaki; Kangawa, Yoshihiro; Kakimoto, Koichi
• Is Part Of: ECS transactions. Volume 80:Number 1(2017)
• Page Start: 295
• Page End: 301
• Publication Date: 2017-08-16
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08001.0295ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We analyzed metal organic vapor phase epitaxy growth mechanism of III-nitride semiconductors, GaN, AlN and InN based on first-principles calculations and thermodynamic analysis. With this calculated methods, we investigate the decomposition process of the group III source gases, X(CH3 )3 (X = Ga, Al, In) at finite temperatures and whether the (CH3 )2 GaNH2 adduct can be formed or not. Our calculated results show that (CH3 )2 GaNH2 adduct cannot be formed in the gas phase reaction in GaN MOVPE. Whereas, (CH3 )2 AlNH2 adduct can be formed so much in gas phase in AlN MOVPE. In case of GaN MOVPE, trimethylgallium (TMG, [Ga(CH3 )3 ]) almost decomposes into Ga gas on growth surface by the assistance of H2 carrier gas instead of (CH3 )2 GaNH2 adduct formation. Moreover, in case of InN MOVPE, (CH3 )2 InNH2 adduct formation cannot occur and it is relatively easy that In gas is produced even if there is no H2 carrier gas.