Epitaxial Ge-on-Nothing Virtual Substrates for 3D Device Stacking Technologies. (8th September 2020)

• Record Type: Journal Article
• Authors: Loo, Roger; Porret, Clement; Han, Han; Depauw, Valerie
• Is Part Of: ECS transactions. Volume 98:Number 5(2020)
• Page Start: 195
• Page End: 201
• Publication Date: 2020-09-08
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09805.0195ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We introduce a fabrication scheme for strain-relaxed Ge, epitaxially grown on a Si-on-Nothing (SiON) template formed from macro-porous Si. The SiON template is fabricated on regular Si substrates using conventional lithography, dry-etching and annealing routines. The material properties of the virtual Ge substrate grown on this detachable template are identical to those obtained for Ge grown on bulk Si. Strain-relaxed, suspended, and detachable Ge-on-Nothing (GeON) was fabricated using a similar fabrication scheme except for the epitaxial growth of Ge on Si, which was performed before the patterning of the substrate. For GeON, the extracted excess carrier lifetime using time-resolved photoluminescence (32 ns) was > 4 times higher than the values measured for Ge grown on bulk Si with a similar thickness of the Ge layer. Both templates can be considered as starting material for layer transfer and 3D device stacking technologies provided that successful detachment from the parent substrate can be demonstrated.