(Invited) Finely Controlled Heterointerfaces between Ge(111) and Metallic Alloys or Insulators for Next Generation Ge-Based Devices. (18th August 2016)

• Record Type: Journal Article
• Authors: Hamaya, Kohei; Yamada, Shinya; Kasahara, Kenji; Kanashima, Takeshi
• Is Part Of: ECS transactions. Volume 75:Number 8(2016)
• Page Start: 651
• Page End: 659
• Publication Date: 2016-08-18
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07508.0651ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Heteroepitaxial growth of bcc metallic alloys or a high- k insulator on Ge(111) has been explored for next generation Ge-based devices. First, we introduce a finely controlled crystal growth technique of bcc-type ferromagnetic alloys on Ge(111). Next, we show that the Fermi level pinning is significantly suppressed at the high-quality bcc-alloys/Ge heterointerfaces. Using these kinds of structures, we can achieve spin injection and detection in n -Ge. Finally, we present a new approach to gate-stack structures for Ge-MOSFET. Even a crystalline high-k insulator can be grown epitaxially on Ge(111) and a high-quality heterointerface can be achieved. Also, reasonable electrical characteristics are obtained. These finely controlled heterointerfaces will open a way for developing new technologies in next generation Ge-based devices with low power consumption.