(Invited) Ferroelectric-HfO2 Devices: Physics and Applications. (8th September 2020)

• Record Type: Journal Article
• Authors: Kobayashi, Masaharu
• Is Part Of: ECS transactions. Volume 98:Number 5(2020)
• Page Start: 9
• Page End: 14
• Publication Date: 2020-09-08
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09805.0009ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Newly discovered ferroelectric-HfO2 opens up the new opportunities of low-power, high-speed, and high-density nonvolatile memories. In this paper, our recent research progresses of ferroelectric-HfO2 memories are introduced: nonvolatile SRAM (NVSRAM) for smart power management in IoT applications, ferroelectric tunnel junction (FTJ) for ultimately small memory device, and ferroelectric FET (FeFET) with novel channel material for high-density memory. Challenges and opportunities of each device technology are discussed.