(Invited) How Far Can We Push Conventional Silicon Technology and What are the Future Alternatives?. (8th September 2020)

• Record Type: Journal Article
• Authors: Saraswat, Krishna C.
• Is Part Of: ECS transactions. Volume 98:Number 5(2020)
• Page Start: 69
• Page End: 75
• Publication Date: 2020-09-08
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09805.0069ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Silicon has dominated the microelectronics industry in the past. However, future Si technology is reaching practical and fundamental limits. To go beyond these limits novel devices and material like Ge, III-Vs, and carbon nanotubes (CNT) are being aggressively studied to continue progress in integrated electronics. Recently 2-dimensional (2D) transition metal dichalcogenide (TMD) materials have emerged as potential candidates for nanoscale devices. Heterogeneous integration of devices in these materials on a Si platform will allow continuity of Moore's Law. The scaling paradigm is also threatened by interconnect limits. Many of these obstacles stem from the physical limitation of Cu-based electrical wires. Three-dimensional (3-D) integration will reduce average wire length and hence reduce power dissipation, signal latency, and increase bandwidth.