Structure of Pr Oxide Films on Si Deposited by Reactive Sputtering. (19th August 2016)

• Record Type: Journal Article
• Authors: Kumagai, Kenta; Yamaguchi, Kouta; Hara, Kenta; Suzuki, Setsu; Ishibashi, Keiji; Yamamoto, Yasuhiro
• Is Part Of: ECS transactions. Volume 75:Number 5(2016)
• Page Start: 301
• Page End: 309
• Publication Date: 2016-08-19
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07505.0301ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Praseodymium oxide thin films were fabricated on p-type Si (100) substrates by reactive RF magnetron sputtering with a metal Pr target in Ar + 10 % O2 . Deposited films were post-annealed in a nitrogen ambient for 30 minutes at 300, 500 and 800 °C. The XRD measurement revealed that the as-deposited Pr oxide film was crystalized and the dominant diffraction line of cubic PrO2 was maintained up to 500 °C. After annealing at 800 °C, the new diffraction line indicating the phase transition to hexagonal Pr2 O3 appeared. The TEM observation revealed that the SiO2 layer present at the interface between the film and the Si substrate in the as-deposited sample was scavenged during the post-annealing up to 500 °C. After annealing at 800 °C, the Pr oxide film had the three-layered structure: the columnar crystal layer, the crystalline grain layer, and the amorphous silicate layer from the surface.