Current methods for GaN synthesis and the limitations. (November 2020)

• Record Type: Journal Article
• Authors: Wang, Yuguo
• Is Part Of: Journal of physics. Volume 1676(2020)
• Publication Date: 2020-11
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1676/1/012002
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: The application of GaN has greatly enhanced the performance of optoelectrical and microelectronic devices. However, the industrial application still faces huge challenges due to the difficulty during the synthesis process. This paper introduces several current methods for GaN synthesis and talks about their advantages and limitations. Four methods are introduced: high pressure nitrogen solution growth process, ammonothermal method, sodium flux process and hydride vapor phase epitaxy. As a result, they are only suitable for specific use like scientific research and can't be used for massive production. This paper reviews main GaN synthesis methods and points out the limitations they have to overcome for commercial applications.