Capacitance characterization of silicon nanowires formed by cryogenic dry etching. (December 2020)

• Record Type: Journal Article
• Authors: Baranov, A I; Kudryashov, D A; Dvoretckaia, L N; Morozov, I A; Uvarov, A V; Vyacheslavova, E A; Shugurov, K Yu; Gudovskikh, A S
• Is Part Of: Journal of physics. Volume 1695(2020)
• Publication Date: 2020-12
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1695/1/012089
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Arrays of silicon nanowires were fabricated by dry etching in the ICP mode in a mixture of SF6 /O2 gases at a temperature of-140 °C. Defects located near the wafer surface with E a =0.30 eV, σ=(1–10)×10 −14 cm 2 and E a =0.68–0.74 eV, σ=1×10 −15 cm 2 were detected by admittance spectroscopy and deep-level transient spectroscopy. An increase in the dry etching time from 3.5 min (for the 1 st sample) to 4.5 min (for the 2 nd sample) leads to an rise of their concentration, but additional stage of wet etching in 4% KOH during 30 s leads to a vanish of the response from the first sample ( N T ˂10 11 cm −3 ), while for the second sample the defect concentration becomes in two times lower.