Cite
HARVARD Citation
Borland, J. et al. (2018). Boosting Ge-Epi P-Well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing. ECS transactions. pp. 357-372. [Online].
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Borland, J. et al. (2018). Boosting Ge-Epi P-Well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing. ECS transactions. pp. 357-372. [Online].