(Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology) Research on Nano and Giga Electronics – Breakthroughs Along the Path. (27th March 2015)

• Record Type: Journal Article
• Authors: Kuo, Yue
• Is Part Of: ECS transactions. Volume 66:Number 5(2015)
• Page Start: 139
• Page End: 154
• Publication Date: 2015-03-27
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06605.0139ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : MOSFETs and TFTs are key semiconductor devices in the two largest semiconductor industries nowadays. The development of the former follows the Moore's Law in shrinking of the size to the nano scale. The advancement of the latter is toward the high density, large area array. They are operated based on the same principle and facing common challenges. The success is dependent on the thorough understanding of material properties, fabrication processes, and device physics. The author reviews two sets of critical works developed in his laboratory, i.e., plasma thin film technology and high- k thin films for electronics and optoelectronics.