(Invited) The Structure-Dependent Properties of InAs Nanowires and Their Devices. (18th August 2016)

• Record Type: Journal Article
• Authors: Fu, Mengqi; Shi, Tuanwei; Li, Xing; Chen, Qing
• Is Part Of: ECS transactions. Volume 75:Number 8(2016)
• Page Start: 733
• Page End: 748
• Publication Date: 2016-08-18
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07508.0733ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : InAs nanowires (NWs) have attracted broad research interests due to their high electron mobility, easily forming ohmic contacts, high g-factor and small bandgap. These excellent properties make InAs NWs suitable for a rich variety of applications, such as high-speed electronic devices, quantum devices and optoelectronic devices. Here, we summarize and analyze our recent results on structure–dependent properties of InAs NWs. The structural properties referred in our works include the diameter, the crystal structure and the axis orientation. Both the electrical properties of InAs NWs and the contact properties between InAs NWs and metals are systematically studied.