Chirped Superlattices as Adjustable Strain Platforms for Metamorphic Semiconductor Devices. (25th October 2017)

• Record Type: Journal Article
• Authors: Chen, Xinkang; Islam, Md Tanvirul; Kujofsa, Tedi; Ayers, John E
• Is Part Of: ECS transactions. Volume 80:Number 10(2017)
• Page Start: 981
• Page End: 989
• Publication Date: 2017-10-25
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08010.0981ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Chirped superlattices are of interest as buffer layers in metamorphic semiconductor device structures, because they can combine the mismatch accommodating properties of compositionally-graded layers with the dislocation filtering properties of superlattices. Important practical aspects of the chirped superlattice as a buffer layer are the surface strain and surface in-plane lattice constant. In this work we studied two basic types of InGaAs/GaAs chirped superlattice buffers; type I is compositionally modulated while type II is thicknesses modulated. For both types, we have investigated the equilibrium surface strain and surface in-plane lattice constant, and have compared the behavior to linearly-graded buffers having the same top target composition of indium.