(Invited) Atomic Layer Deposition of Multiferroic Materials. (16th August 2016)

• Record Type: Journal Article
• Authors: Chang, Jeffery; Pham, Calvin D; Chang, Jane P.
• Is Part Of: ECS transactions. Volume 75:Number 6(2016)
• Page Start: 119
• Page End: 122
• Publication Date: 2016-08-16
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07506.0119ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The introduction of novel and functionally improved materials into silicon based integrated circuits is a major driver to enable the continued down-scaling of circuit density and performance enhancement in analog, logic, memory and sensing devices. Many novel materials, such as multiferroics, magnetic materials and phase change materials, are introducing new and unique functionalities to further technological advancement. Leveraging the self-limiting surface reactions in atomic layer deposition process, complex materials can be synthesized not only with elemental precision to achieve the desired functionality but also with outstanding conformality to ensure superior interface coupling. The latter enables the integration of ferroelectrics with ferromagnetics to realize multiferroism and magnetoelectric effect for applications in memory, antenna and motors.