(Invited) Determining Si Composition in SiGe Alloys with < 1% Si Concentrations Using Raman Spectroscopy. (20th July 2018)

• Record Type: Journal Article
• Authors: De Wolf, Ingrid; Simons, Veerle; Srinivasan, Srinivasan Ashwyn; Verheyen, Peter; Loo, Roger
• Is Part Of: ECS transactions. Volume 86:Number 7(2018)
• Page Start: 397
• Page End: 407
• Publication Date: 2018-07-20
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08607.0397ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : This paper proposes a methodology based on Raman spectroscopy to determine the Si concentration in SiGe films with less than 1.2% Si. The methodology is validated on SiGe films with Si concentrations varying between 0.10% and 1.83% using SIMS results. It is next applied in a study of diffusion of Si in annealed GeSi films.