Lead-free ferroelectric barium titanate -based thin film for tunable microwave device application. Issue 1 (February 2021)

• Record Type: Journal Article
• Authors: Vu, Thu-Hien; Phuong, Nguyen T. M.; Nguyen, Tai
• Is Part Of: IOP conference series. Volume 1091:Issue 1(2021)
• Publication Date: 2021-02
• Subjects: Materials science -- Periodicals; 620.1105
• DOI: 10.1088/1757-899X/1091/1/012060
• Languages: English
• ISSNs: 1757-8981

Abstract

Abstract: Lead-free ferroelectric barium titanate-based (Ba0.85 Sr0.15 Zr0.1 Ti0.9 O3, BSZT) thin films have been successfully deposited on Pt- coated silicon substrates by a spin-coating solgel method. Microstructure and dielectric respones of the Pt/BSZT/Pt thin film capacitors were investigated in detail. X-ray diffraction analysis results indicated that BSZT thin films were well crystallized in tetragonal perovskite structure with a random crystal orientation at rather low temperature of 650 °C. Dielectric constant and dielectric loss of the thin film capacitors were performed at various bias voltage ranges and frequency from 1kHz up to 5MHz. Hysteresis C-V curves with two maxima confirmed the ferroelectric nature in the film. The BSZT capacitors provide excellent dielectric tunability ∼ 42- 69% and high figure-of-merit (FOM) ∼ 4-17 at different bias voltages.