Gate Electrode Material Effect on Characteristics of Zirconium-Doped Hafnium Oxide High-k MOS Capacitors. (24th April 2020)

• Record Type: Journal Article
• Authors: Lin, Wen-Shan; Liu, Lingguang; Kuo, Yue
• Is Part Of: ECS transactions. Volume 97:Number 5(2020)
• Page Start: 143
• Page End: 149
• Publication Date: 2020-04-24
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09705.0143ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Electrical properties of MOS capacitors made of Zr-doped hafnium oxide high-k gate dielectric with molybdenum and copper gate electrodes have been studied. Under the thermal annealing condition, the reaction between the gate electrode and gate dielectric is highly dependent on the electrode material. The C-V characteristics of the molybdenum gated capacitor are improved with the post metal annealing due to the reduction of defects. However, the copper gated capacitor deteriorated after the annealing step due to the diffusion of copper into the gate dielectric layer. Therefore, the metal gate material is critical to the electrical properties of the MOS capacitor with the high-k gate dielectric film.