Radiation Effects in Diamond pHEMTs. (3rd July 2019)

• Record Type: Journal Article
• Authors: Thapa, Aayush; Shahin, David; Christou, Aris
• Is Part Of: ECS transactions. Volume 92:Number 7(2019)
• Page Start: 141
• Page End: 144
• Publication Date: 2019-07-03
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09207.0141ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Field effect transistors (FET) based on diamond have 2-dimensional hole gas (2DHG) as conduction channel. In terms of usability in harsh environment, an important aspect of diamond-based FETs is its promise of radiation hardness. Two different types of radiation were used. A cyclotron was used for proton irradiation on diamond substrates, and a high capacity dry cell, panoramic gamma irradiator with 60 Co as source material was used for gamma irradiation on diamond-based FETs. Diamond substrates were irradiated with protons at 152 keV and fluence of 10 12 particles/cm 2 .