Tunable Schottky barrier height of ZnO films by Cu doping. Issue 1 (July 2020)

• Record Type: Journal Article
• Authors: Nurfani, E; Kesuma, W A P; Lailani, A; Anrokhi, M S; Kadja, G T M; Rozana, M; Sipahutar, W S; Arif, M F
• Is Part Of: IOP conference series. Volume 537:Issue 1(2020)
• Publication Date: 2020-07
• Subjects: Earth sciences -- Periodicals; Environmental sciences -- Congresses; Environmental sciences -- Periodicals; 550.5
• DOI: 10.1088/1755-1315/537/1/012038
• Languages: English
• ISSNs: 1755-1307

Abstract

Abstract: Understanding a mechanism behind photosensitivity in oxide materials is important to realize future photodetector devices. We have studied electrical properties of ZnO:Cu (0-2.5 at.%) films deposited by a spray technique. Here, Ag-ZnO-Ag planar configuration was used to study the Schottky barrier. Using current-voltage (I-V) characterization, a significant increment in the photocurrent is observed in all samples, indicating a photosensitivity behavior. The Schottky barrier is clearly observed in the doped sample. The Cu concentration of 1.5 at.% show the highest Schottky barrier height (0.8 eV), which may be originated from carrier trapping under dark and carrier de-trapping under ultraviolet radiation. Thus, our result is essential to improve the functionality of ZnO for photodetector applications.