(Invited) Display and LSI Applications of Oxide Semiconductor LSIs (OS LSIs) Using Crystalline In–Ga–Zn Oxide (IGZO): Applications Related to Coronavirus COVID-19 Pandemic. (8th September 2020)

• Record Type: Journal Article
• Authors: Onuki, Tatsuya; Okamoto, Yuki; Aoki, Takeshi; Matsuzaki, Takanori; Kozuma, Munehiro; Kunitake, Hitoshi; Motoyoshi, Ryosuke; Kimura, Hajime; Yamane, Yasumasa; Sasagawa, Shinya; Yamazaki, Shunpei
• Is Part Of: ECS transactions. Volume 98:Number 7(2020)
• Page Start: 185
• Page End: 204
• Publication Date: 2020-09-08
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09807.0185ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : This paper shows structures and features of a field-effect transistor (FET) fabricated using a c-axis aligned crystalline In–Ga–Zn oxide (CAAC-IGZO), which is a typical example of crystalline oxide semiconductor (OS) ceramics, as a channel material, and applications of the CAAC-IGZO FET up to this point. In this study, we propose an AI accelerator as novel LSI using an OS (OS LSI) and make a detail description of the AI accelerator.