Electrical hysteresis of single-walled carbon nanotube field effect transistors and its modulation by an external magnetic field. (May 2020)

• Record Type: Journal Article
• Authors: Peng, Zhisheng; Cai, Jinzhong; Wei, Haonan; Yue, Junyi; Liu, Jia; Sun, Lianfeng; Wang, Gongtang
• Is Part Of: Journal of physics. Volume 1550:Number 3(2020)
• Publication Date: 2020-05
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1550/3/032155
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Electrical hysteresis in single-walled carbon nanotube (SWNT) field-effect transistors has been observed in 2002, which is a key factor to determine the performance of carbon nanotube field-effect transistors and related systems. Meanwhile, the mechanisms of the hysteresis are controversial and in-depth understanding is still required. In this work, we report the observation of hysteresis in a three-terminal SWNT FET at room temperature under atmospheric conditions. The hysteresis is found to be modulated by an external magnetic field. And there is a significant difference for the modulation of the hysteresis between the positive and negative magnetic fields. Possible mechanism is proposed and discussed.