Fabrication of Highly Resistive NiO Thin Films for Nanoelectronic Applications. Issue 1 (31st October 2022)

• Record Type: Journal Article
• Authors: Mohr, Johannes; Hennen, Tyler; Bedau, Daniel; Nag, Joyeeta; Waser, Rainer; Wouters, Dirk J.
• Is Part Of: ADVANCED PHYSICS RESEARCH. Volume 1:Issue 1(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-10-31
• Subjects: charge transfer insulators -- cluster analysis -- factorial DOE -- NiO -- sputter deposition; 530
• DOI: 10.1002/apxr.202200008
• Languages: English
• ISSNs: 2751-1200

Abstract

Abstract: Thin films of the prototypical charge transfer insulator nickel oxide appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging, however, and mostly a p‐type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the properties of thin films deposited using sputtering. A cluster analysis is performed, and four main types of films are found. Among them, the desired insulating phase is identified. From this material, nanoscale devices are fabricated, which demonstrate that the results carry over to relevant length scales. Initial switching results are reported. Abstract : Nickel oxide thin films show promise for nanoelectronic devices, but the ideal charge transfer insulator phase is difficult to prepare. Through a comprehensive investigation, four classes of films that can be prepared by reactive magnetron sputtering are identified; among them is the desired insulator. Fabrication of nanoscale devices showing resistive switching behavior from this material is demonstrated.