Centimetre-scale single crystal α-MoO3: oxygen assisted self-standing growth and low-energy consumption synaptic devices. Issue 3 (19th December 2022)
- Record Type:
- Journal Article
- Title:
- Centimetre-scale single crystal α-MoO3: oxygen assisted self-standing growth and low-energy consumption synaptic devices. Issue 3 (19th December 2022)
- Main Title:
- Centimetre-scale single crystal α-MoO3: oxygen assisted self-standing growth and low-energy consumption synaptic devices
- Authors:
- Shan, Xin
Wu, Zeyu
Xie, Yangyang
Lin, Xin
Zhou, Baozeng
Zhang, Yupeng
Yan, Xiaobing
Ren, Tianling
Wang, Fang
Zhang, Kailiang - Abstract:
- Abstract : The centimeter-scale single crystal α-MoO3 was developed via oxygen assisted self-standing growth. The Ti/α-MoO3 /Au memristor simulated synaptic properties and achieved low-energy consumption conductance update. Abstract : High-density storage and neuromorphic devices based on 2D materials are hindered by large-scale growth. Moreover, the lack of a mature mechanism makes it difficult to obtain high-quality single crystals in large-scale 2D materials. In this work, we prepared a centimeter-scale single crystal α-MoO3 via an oxygen assisted substrate-free self-standing growth method and mechanism and constructed high-performance synaptic devices based on the centimeter-scale α-MoO3 . The oxygen assisted growth mechanism of α-MoO3 was developed from the periodic bond chain theory. The large-scale α-MoO3 is up to 2 cm and exhibits high homogeneity and single crystalline characteristic. Furthermore, with an optimized oxygen partial pressure (18%), the centimeter-scale α-MoO3 makes the as-prepared memristor achieve continuous conductance modulation. Moreover, the trap-controlled electron conducting mechanism of the memristor was demonstrated through I – V curve fitting analysis at various temperatures, in which the high resistance state section demonstrates space-charge-limited conduction (SCLC) mode. Moreover, the as-prepared α-MoO3 memristors exhibit low-energy consumption and well emulate the essential synaptic behaviors including excitatory/inhibitory postsynapticAbstract : The centimeter-scale single crystal α-MoO3 was developed via oxygen assisted self-standing growth. The Ti/α-MoO3 /Au memristor simulated synaptic properties and achieved low-energy consumption conductance update. Abstract : High-density storage and neuromorphic devices based on 2D materials are hindered by large-scale growth. Moreover, the lack of a mature mechanism makes it difficult to obtain high-quality single crystals in large-scale 2D materials. In this work, we prepared a centimeter-scale single crystal α-MoO3 via an oxygen assisted substrate-free self-standing growth method and mechanism and constructed high-performance synaptic devices based on the centimeter-scale α-MoO3 . The oxygen assisted growth mechanism of α-MoO3 was developed from the periodic bond chain theory. The large-scale α-MoO3 is up to 2 cm and exhibits high homogeneity and single crystalline characteristic. Furthermore, with an optimized oxygen partial pressure (18%), the centimeter-scale α-MoO3 makes the as-prepared memristor achieve continuous conductance modulation. Moreover, the trap-controlled electron conducting mechanism of the memristor was demonstrated through I – V curve fitting analysis at various temperatures, in which the high resistance state section demonstrates space-charge-limited conduction (SCLC) mode. Moreover, the as-prepared α-MoO3 memristors exhibit low-energy consumption and well emulate the essential synaptic behaviors including excitatory/inhibitory postsynaptic current, paired-pulse facilitation and long-term plasticity. … (more)
- Is Part Of:
- Nanoscale. Volume 15:Issue 3(2023)
- Journal:
- Nanoscale
- Issue:
- Volume 15:Issue 3(2023)
- Issue Display:
- Volume 15, Issue 3 (2023)
- Year:
- 2023
- Volume:
- 15
- Issue:
- 3
- Issue Sort Value:
- 2023-0015-0003-0000
- Page Start:
- 1200
- Page End:
- 1209
- Publication Date:
- 2022-12-19
- Subjects:
- Nanoscience -- Periodicals
Nanotechnology -- Periodicals
620.505 - Journal URLs:
- http://www.rsc.org/Publishing/Journals/NR/Index.asp ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/d2nr04530c ↗
- Languages:
- English
- ISSNs:
- 2040-3364
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 9830.266000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 25327.xml