(Invited) Electrochemical Gating-Induced Hydrogenation in VO2 Nanowires at Room Temperature. (19th August 2016)

• Record Type: Journal Article
• Authors: Kanki, Teruo; Sasaki, Tusbasa; Tanaka, Hidekazu
• Is Part Of: ECS transactions. Volume 75:Number 5(2016)
• Page Start: 103
• Page End: 109
• Publication Date: 2016-08-19
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07505.0103ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Reversible and memristive modulation of the transport properties in vanadium dioxide (VO2 ) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowed us to directly investigate behavior of revealed hydrogen intercalation and migration aspects with time and spatial evolutions in nanowires. These results show that air nanogaps can operate as an electrochemical reaction field, even in a gaseous atmosphere, and offer a new technique to introduce reversible redox reactions even at room temperature and will serve as a powerful tool for examining the transport properties of the redox effect.